* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances(Typical:418pF)
* 100% Single Pulse avalanche energy Test .

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS180N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Pa.

CS180N10A8

CS180N06A0

CS180N06A8

CS180N08A8

CS18-05N-1

CS18-05N-2

CS18-05P-1

CS18-08N-1

CS18-08N-2

CS18-08P-1

CS18-08P-2

CS181002

CS181012